IRF1902PBF

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Manifakti Pati	IRF1902PBF
Manifakti	IR (Infineon Technologies)
Deskripsyon	MOSFET N-CH 20V 4.2A 8SO
Kategori	pwodwi semi-kondiktè disrè
Fanmi	tranzistò - fets, mosfets - sèl
Sik lavi:	New from this manufacturer.
Livrezon:	DHL FedEx Ups TNT EMS
Peman	T/T Paypal Visa MoneyGram Western Union
Fèy done	IRF1902PBF PDF

Disponibilite

Nan stok	659830
Pri Inite	$ 0.00000

IRF1902PBF Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

IRF1902PBF Espesifikasyon

Kalite	Deskripsyon
seri:	HEXFET®
pake:	Tube
estati pati:	Obsolete
fet tip:	N-Channel
teknoloji:	MOSFET (Metal Oxide)
drenaj nan sous vòltaj (vdss):	20 V
aktyèl - drenaj kontinyèl (id) @ 25 ° c:	4.2A (Ta)
vòltaj kondwi (max rds sou, min rds sou):	2.7V, 4.5V
rds sou (max) @ id, vgs:	85mOhm @ 4A, 4.5V
vgs(th) (max) @ id:	700mV @ 250µA
chaj pòtay (qg) (max) @ vgs:	7.5 nC @ 4.5 V
vgs (max):	±12V
kapasite antre (ciss) (max) @ vds:	310 pF @ 15 V
fet karakteristik:	-
dissipation pouvwa (max):	2.5W (Ta)
opere tanperati:	-55°C ~ 150°C (TJ)
kalite aliye:	Surface Mount
pake aparèy founisè:	8-SO
pake / ka:	8-SOIC (0.154", 3.90mm Width)

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.