SCTWA90N65G2V-4

Imaj se pou referans, tanpri kontakte nou pou jwenn foto reyèl la

Manifakti Pati	SCTWA90N65G2V-4
Manifakti	STMicroelectronics
Deskripsyon	TRANS SJT N-CH 650V 119A HIP247
Kategori	pwodwi semi-kondiktè disrè
Fanmi	tranzistò - fets, mosfets - sèl
Sik lavi:	New from this manufacturer.
Livrezon:	DHL FedEx Ups TNT EMS
Peman	T/T Paypal Visa MoneyGram Western Union
Fèy done	SCTWA90N65G2V-4 PDF

Disponibilite

Nan stok	63
Pri Inite	$ 29.19000

SCTWA90N65G2V-4 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

SCTWA90N65G2V-4 Espesifikasyon

Kalite	Deskripsyon
seri:	-
pake:	Tube
estati pati:	Active
fet tip:	N-Channel
teknoloji:	SiCFET (Silicon Carbide)
drenaj nan sous vòltaj (vdss):	650 V
aktyèl - drenaj kontinyèl (id) @ 25 ° c:	119A (Tc)
vòltaj kondwi (max rds sou, min rds sou):	-
rds sou (max) @ id, vgs:	24mOhm @ 50A, 18V
vgs(th) (max) @ id:	5V @ 1mA
chaj pòtay (qg) (max) @ vgs:	157 nC @ 18 V
vgs (max):	+22V, -10V
kapasite antre (ciss) (max) @ vds:	3380 pF @ 400 V
fet karakteristik:	-
dissipation pouvwa (max):	565W (Tc)
opere tanperati:	-55°C ~ 200°C (TJ)
kalite aliye:	Through Hole
pake aparèy founisè:	HiP247™ Long Leads
pake / ka:	TO-247-3

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.