RQ3E110AJTB

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Manifakti Pati	RQ3E110AJTB
Manifakti	ROHM Semiconductor
Deskripsyon	MOSFET N-CH 30V 11A/24A 8HSMT
Kategori	pwodwi semi-kondiktè disrè
Fanmi	tranzistò - fets, mosfets - sèl
Sik lavi:	New from this manufacturer.
Livrezon:	DHL FedEx Ups TNT EMS
Peman	T/T Paypal Visa MoneyGram Western Union
Fèy done	RQ3E110AJTB PDF

Disponibilite

Nan stok	3217
Pri Inite	$ 0.69000

RQ3E110AJTB Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

RQ3E110AJTB Espesifikasyon

Kalite	Deskripsyon
seri:	-
pake:	Tape & Reel (TR)Cut Tape (CT)
estati pati:	Active
fet tip:	N-Channel
teknoloji:	MOSFET (Metal Oxide)
drenaj nan sous vòltaj (vdss):	30 V
aktyèl - drenaj kontinyèl (id) @ 25 ° c:	11A (Ta), 24A (Tc)
vòltaj kondwi (max rds sou, min rds sou):	2.5V, 4.5V
rds sou (max) @ id, vgs:	11.7mOhm @ 11A, 4.5V
vgs(th) (max) @ id:	1.5V @ 1mA
chaj pòtay (qg) (max) @ vgs:	13.5 nC @ 4.5 V
vgs (max):	±12V
kapasite antre (ciss) (max) @ vds:	1500 pF @ 15 V
fet karakteristik:	-
dissipation pouvwa (max):	2W (Ta)
opere tanperati:	150°C (TJ)
kalite aliye:	Surface Mount
pake aparèy founisè:	8-HSMT (3.2x3)
pake / ka:	8-PowerVDFN

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.