SCT3120ALGC11

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Manifakti Pati	SCT3120ALGC11
Manifakti	ROHM Semiconductor
Deskripsyon	SICFET N-CH 650V 21A TO247N
Kategori	pwodwi semi-kondiktè disrè
Fanmi	tranzistò - fets, mosfets - sèl
Sik lavi:	New from this manufacturer.
Livrezon:	DHL FedEx Ups TNT EMS
Peman	T/T Paypal Visa MoneyGram Western Union
Fèy done	SCT3120ALGC11 PDF

Disponibilite

Nan stok	469608
Pri Inite	$ 7.98000

SCT3120ALGC11 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

SCT3120ALGC11 Espesifikasyon

Kalite	Deskripsyon
seri:	-
pake:	Tube
estati pati:	Active
fet tip:	N-Channel
teknoloji:	SiCFET (Silicon Carbide)
drenaj nan sous vòltaj (vdss):	650 V
aktyèl - drenaj kontinyèl (id) @ 25 ° c:	21A (Tc)
vòltaj kondwi (max rds sou, min rds sou):	18V
rds sou (max) @ id, vgs:	156mOhm @ 6.7A, 18V
vgs(th) (max) @ id:	5.6V @ 3.33mA
chaj pòtay (qg) (max) @ vgs:	38 nC @ 18 V
vgs (max):	+22V, -4V
kapasite antre (ciss) (max) @ vds:	460 pF @ 500 V
fet karakteristik:	-
dissipation pouvwa (max):	103W (Tc)
opere tanperati:	175°C (TJ)
kalite aliye:	Through Hole
pake aparèy founisè:	TO-247N
pake / ka:	TO-247-3

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.