TP65H300G4LSG

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Manifakti Pati	TP65H300G4LSG
Manifakti	Transphorm
Deskripsyon	GANFET N-CH 650V 6.5A 3PQFN
Kategori	pwodwi semi-kondiktè disrè
Fanmi	tranzistò - fets, mosfets - sèl
Sik lavi:	New from this manufacturer.
Livrezon:	DHL FedEx Ups TNT EMS
Peman	T/T Paypal Visa MoneyGram Western Union
Fèy done	TP65H300G4LSG PDF

Disponibilite

Nan stok	240
Pri Inite	$ 4.02000

TP65H300G4LSG Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

TP65H300G4LSG Espesifikasyon

Kalite	Deskripsyon
seri:	-
pake:	Tray
estati pati:	Active
fet tip:	N-Channel
teknoloji:	GaNFET (Gallium Nitride)
drenaj nan sous vòltaj (vdss):	650 V
aktyèl - drenaj kontinyèl (id) @ 25 ° c:	6.5A (Tc)
vòltaj kondwi (max rds sou, min rds sou):	8V
rds sou (max) @ id, vgs:	312mOhm @ 5A, 8V
vgs(th) (max) @ id:	2.6V @ 500µA
chaj pòtay (qg) (max) @ vgs:	9.6 nC @ 8 V
vgs (max):	±18V
kapasite antre (ciss) (max) @ vds:	760 pF @ 400 V
fet karakteristik:	-
dissipation pouvwa (max):	21W (Tc)
opere tanperati:	-55°C ~ 150°C (TJ)
kalite aliye:	Surface Mount
pake aparèy founisè:	3-PQFN (8x8)
pake / ka:	3-PowerDFN

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.