IPD640N06LGBTMA1

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Manifakti Pati	IPD640N06LGBTMA1
Manifakti	IR (Infineon Technologies)
Deskripsyon	MOSFET N-CH 60V 18A TO252-3
Kategori	pwodwi semi-kondiktè disrè
Fanmi	tranzistò - fets, mosfets - sèl
Sik lavi:	New from this manufacturer.
Livrezon:	DHL FedEx Ups TNT EMS
Peman	T/T Paypal Visa MoneyGram Western Union
Fèy done	IPD640N06LGBTMA1 PDF

Disponibilite

Nan stok	208555
Pri Inite	$ 0.76000

IPD640N06LGBTMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

IPD640N06LGBTMA1 Espesifikasyon

Kalite	Deskripsyon
seri:	OptiMOS™
pake:	Tape & Reel (TR)Cut Tape (CT)
estati pati:	Active
fet tip:	N-Channel
teknoloji:	MOSFET (Metal Oxide)
drenaj nan sous vòltaj (vdss):	60 V
aktyèl - drenaj kontinyèl (id) @ 25 ° c:	18A (Tc)
vòltaj kondwi (max rds sou, min rds sou):	4.5V, 10V
rds sou (max) @ id, vgs:	64mOhm @ 18A, 10V
vgs(th) (max) @ id:	2V @ 16µA
chaj pòtay (qg) (max) @ vgs:	13 nC @ 10 V
vgs (max):	±20V
kapasite antre (ciss) (max) @ vds:	470 pF @ 30 V
fet karakteristik:	-
dissipation pouvwa (max):	47W (Tc)
opere tanperati:	-55°C ~ 175°C (TJ)
kalite aliye:	Surface Mount
pake aparèy founisè:	PG-TO252-3
pake / ka:	TO-252-3, DPak (2 Leads + Tab), SC-63

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.