IPB065N03LGATMA1

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Manifakti Pati	IPB065N03LGATMA1
Manifakti	Rochester Electronics
Deskripsyon	MOSFET N-CH 30V 50A D2PAK
Kategori	pwodwi semi-kondiktè disrè
Fanmi	tranzistò - fets, mosfets - sèl
Sik lavi:	New from this manufacturer.
Livrezon:	DHL FedEx Ups TNT EMS
Peman	T/T Paypal Visa MoneyGram Western Union
Fèy done	IPB065N03LGATMA1 PDF

Disponibilite

Nan stok	468533
Pri Inite	$ 0.42000

IPB065N03LGATMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

IPB065N03LGATMA1 Espesifikasyon

Kalite	Deskripsyon
seri:	OptiMOS™
pake:	Bulk
estati pati:	Obsolete
fet tip:	N-Channel
teknoloji:	MOSFET (Metal Oxide)
drenaj nan sous vòltaj (vdss):	30 V
aktyèl - drenaj kontinyèl (id) @ 25 ° c:	50A (Tc)
vòltaj kondwi (max rds sou, min rds sou):	4.5V, 10V
rds sou (max) @ id, vgs:	6.5mOhm @ 30A, 10V
vgs(th) (max) @ id:	2.2V @ 250µA
chaj pòtay (qg) (max) @ vgs:	23 nC @ 10 V
vgs (max):	±20V
kapasite antre (ciss) (max) @ vds:	2.4 pF @ 15 V
fet karakteristik:	-
dissipation pouvwa (max):	56W (Tc)
opere tanperati:	-55°C ~ 175°C (TJ)
kalite aliye:	Surface Mount
pake aparèy founisè:	D²PAK (TO-263AB)
pake / ka:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.