IPAW60R280CEXKSA1

Imaj se pou referans, tanpri kontakte nou pou jwenn foto reyèl la

Manifakti Pati	IPAW60R280CEXKSA1
Manifakti	IR (Infineon Technologies)
Deskripsyon	MOSFET N-CH 600V 19.3A TO220
Kategori	pwodwi semi-kondiktè disrè
Fanmi	tranzistò - fets, mosfets - sèl
Sik lavi:	New from this manufacturer.
Livrezon:	DHL FedEx Ups TNT EMS
Peman	T/T Paypal Visa MoneyGram Western Union
Fèy done	IPAW60R280CEXKSA1 PDF

Disponibilite

Nan stok	312109
Pri Inite	$ 1.02104

IPAW60R280CEXKSA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

IPAW60R280CEXKSA1 Espesifikasyon

Kalite	Deskripsyon
seri:	CoolMOS™
pake:	Tube
estati pati:	Active
fet tip:	N-Channel
teknoloji:	MOSFET (Metal Oxide)
drenaj nan sous vòltaj (vdss):	600 V
aktyèl - drenaj kontinyèl (id) @ 25 ° c:	19.3A (Tc)
vòltaj kondwi (max rds sou, min rds sou):	10V
rds sou (max) @ id, vgs:	280mOhm @ 6.5A, 10V
vgs(th) (max) @ id:	3.5V @ 430µA
chaj pòtay (qg) (max) @ vgs:	43 nC @ 10 V
vgs (max):	±20V
kapasite antre (ciss) (max) @ vds:	950 pF @ 100 V
fet karakteristik:	Super Junction
dissipation pouvwa (max):	32W (Tc)
opere tanperati:	-40°C ~ 150°C (TJ)
kalite aliye:	Through Hole
pake aparèy founisè:	PG-TO220 Full Pack, Wide Creepage
pake / ka:	TO-220-3 Full Pack, Variant

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.