IPU80R2K8CEBKMA1

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Manifakti Pati	IPU80R2K8CEBKMA1
Manifakti	Rochester Electronics
Deskripsyon	MOSFET N-CH 800V 1.9A TO251-3
Kategori	pwodwi semi-kondiktè disrè
Fanmi	tranzistò - fets, mosfets - sèl
Sik lavi:	New from this manufacturer.
Livrezon:	DHL FedEx Ups TNT EMS
Peman	T/T Paypal Visa MoneyGram Western Union
Fèy done	IPU80R2K8CEBKMA1 PDF

Disponibilite

Nan stok	233970
Pri Inite	$ 0.23000

IPU80R2K8CEBKMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

IPU80R2K8CEBKMA1 Espesifikasyon

Kalite	Deskripsyon
seri:	CoolMOS™
pake:	Tube
estati pati:	Obsolete
fet tip:	N-Channel
teknoloji:	MOSFET (Metal Oxide)
drenaj nan sous vòltaj (vdss):	800 V
aktyèl - drenaj kontinyèl (id) @ 25 ° c:	1.9A (Tc)
vòltaj kondwi (max rds sou, min rds sou):	10V
rds sou (max) @ id, vgs:	2.8Ohm @ 1.1A, 10V
vgs(th) (max) @ id:	3.9V @ 120µA
chaj pòtay (qg) (max) @ vgs:	12 nC @ 10 V
vgs (max):	±20V
kapasite antre (ciss) (max) @ vds:	290 pF @ 100 V
fet karakteristik:	-
dissipation pouvwa (max):	42W (Tc)
opere tanperati:	-55°C ~ 150°C (TJ)
kalite aliye:	Through Hole
pake aparèy founisè:	PG-TO251-3
pake / ka:	TO-251-3 Short Leads, IPak, TO-251AA

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.