IPP80N06S207AKSA1

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Manifakti Pati	IPP80N06S207AKSA1
Manifakti	Rochester Electronics
Deskripsyon	MOSFET N-CH 55V 80A TO220-3-1
Kategori	pwodwi semi-kondiktè disrè
Fanmi	tranzistò - fets, mosfets - sèl
Sik lavi:	New from this manufacturer.
Livrezon:	DHL FedEx Ups TNT EMS
Peman	T/T Paypal Visa MoneyGram Western Union
Fèy done	IPP80N06S207AKSA1 PDF

Disponibilite

Nan stok	9500
Pri Inite	$ 0.71000

IPP80N06S207AKSA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

IPP80N06S207AKSA1 Espesifikasyon

Kalite	Deskripsyon
seri:	OptiMOS™
pake:	Bulk
estati pati:	Active
fet tip:	N-Channel
teknoloji:	MOSFET (Metal Oxide)
drenaj nan sous vòltaj (vdss):	55 V
aktyèl - drenaj kontinyèl (id) @ 25 ° c:	80A (Tc)
vòltaj kondwi (max rds sou, min rds sou):	10V
rds sou (max) @ id, vgs:	6.6mOhm @ 68A, 10V
vgs(th) (max) @ id:	4V @ 180µA
chaj pòtay (qg) (max) @ vgs:	110 nC @ 10 V
vgs (max):	±20V
kapasite antre (ciss) (max) @ vds:	3.4 pF @ 25 V
fet karakteristik:	-
dissipation pouvwa (max):	250W (Tc)
opere tanperati:	-55°C ~ 175°C (TJ)
kalite aliye:	Through Hole
pake aparèy founisè:	PG-TO220-3-1
pake / ka:	TO-220-3

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.