IPD60R600E6ATMA1

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Manifakti Pati	IPD60R600E6ATMA1
Manifakti	Rochester Electronics
Deskripsyon	COOLMOS N-CHANNEL POWER MOSFET
Kategori	pwodwi semi-kondiktè disrè
Fanmi	tranzistò - fets, mosfets - sèl
Sik lavi:	New from this manufacturer.
Livrezon:	DHL FedEx Ups TNT EMS
Peman	T/T Paypal Visa MoneyGram Western Union
Fèy done	IPD60R600E6ATMA1 PDF

Disponibilite

Nan stok	8488
Pri Inite	$ 0.52000

IPD60R600E6ATMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

IPD60R600E6ATMA1 Espesifikasyon

Kalite	Deskripsyon
seri:	CoolMOS™ E6
pake:	Bulk
estati pati:	Active
fet tip:	N-Channel
teknoloji:	MOSFET (Metal Oxide)
drenaj nan sous vòltaj (vdss):	600 V
aktyèl - drenaj kontinyèl (id) @ 25 ° c:	7.3A (Tc)
vòltaj kondwi (max rds sou, min rds sou):	10V
rds sou (max) @ id, vgs:	600mOhm @ 2.4A, 10V
vgs(th) (max) @ id:	3.5V @ 200µA
chaj pòtay (qg) (max) @ vgs:	20.5 nC @ 10 V
vgs (max):	±20V
kapasite antre (ciss) (max) @ vds:	440 pF @ 100 V
fet karakteristik:	-
dissipation pouvwa (max):	63W (Tc)
opere tanperati:	-
kalite aliye:	Surface Mount
pake aparèy founisè:	TO-252
pake / ka:	TO-252-3, DPak (2 Leads + Tab), SC-63

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.