BSC009NE2LSATMA1

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Manifakti Pati	BSC009NE2LSATMA1
Manifakti	IR (Infineon Technologies)
Deskripsyon	MOSFET N-CH 25V 41A/100A TDSON
Kategori	pwodwi semi-kondiktè disrè
Fanmi	tranzistò - fets, mosfets - sèl
Sik lavi:	New from this manufacturer.
Livrezon:	DHL FedEx Ups TNT EMS
Peman	T/T Paypal Visa MoneyGram Western Union
Fèy done	BSC009NE2LSATMA1 PDF

Disponibilite

Nan stok	3332
Pri Inite	$ 1.79000

BSC009NE2LSATMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

BSC009NE2LSATMA1 Espesifikasyon

Kalite	Deskripsyon
seri:	OptiMOS™
pake:	Tape & Reel (TR)Cut Tape (CT)
estati pati:	Active
fet tip:	N-Channel
teknoloji:	MOSFET (Metal Oxide)
drenaj nan sous vòltaj (vdss):	25 V
aktyèl - drenaj kontinyèl (id) @ 25 ° c:	41A (Ta), 100A (Tc)
vòltaj kondwi (max rds sou, min rds sou):	4.5V, 10V
rds sou (max) @ id, vgs:	0.9mOhm @ 30A, 10V
vgs(th) (max) @ id:	2.2V @ 250µA
chaj pòtay (qg) (max) @ vgs:	126 nC @ 10 V
vgs (max):	±20V
kapasite antre (ciss) (max) @ vds:	5800 pF @ 12 V
fet karakteristik:	-
dissipation pouvwa (max):	2.5W (Ta), 96W (Tc)
opere tanperati:	-55°C ~ 150°C (TJ)
kalite aliye:	Surface Mount
pake aparèy founisè:	PG-TDSON-8-7
pake / ka:	8-PowerTDFN

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.