IGP01N120H2XKSA1

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Manifakti Pati	IGP01N120H2XKSA1
Manifakti	Rochester Electronics
Deskripsyon	POWER BIPOLAR TRANSISTOR, NPN
Kategori	pwodwi semi-kondiktè disrè
Fanmi	tranzistò - igbts - sèl
Sik lavi:	New from this manufacturer.
Livrezon:	DHL FedEx Ups TNT EMS
Peman	T/T Paypal Visa MoneyGram Western Union
Fèy done	IGP01N120H2XKSA1 PDF

Disponibilite

Nan stok	26012
Pri Inite	$ 0.55000

IGP01N120H2XKSA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

IGP01N120H2XKSA1 Espesifikasyon

Kalite	Deskripsyon
seri:	-
pake:	Tube
estati pati:	Obsolete
kalite igbt:	-
vòltaj - pann emetè pèseptè (max):	1.2 V
aktyèl - pèseptè (ic) (max):	3.2 A
aktyèl - pèseptè enpulsyonèl (icm):	3.5 A
vce(on) (max) @ vge, ic:	2.8V @ 15V, 1A
pouvwa - max:	28 W
chanje enèji:	140µJ
kalite opinyon:	Standard
chaj pòtay:	8.6 nC
td (on/off) @ 25°c:	13ns/370ns
kondisyon tès la:	800V, 1A, 241Ohm, 15V
tan rekiperasyon ranvèse (trr):	-
opere tanperati:	-40°C ~ 150°C (TJ)
kalite aliye:	Through Hole
pake / ka:	TO-220-3
pake aparèy founisè:	PG-TO220-3

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.