IPD65R420CFDBTMA1

Image is for reference, please contact us to get the real picture

Manufacturer Part	IPD65R420CFDBTMA1
Manufacturer	Rochester Electronics
Description	MOSFET N-CH 650V 8.7A TO252-3
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Lifecycle:	New from this manufacturer.
Delivery:	DHL FedEx Ups TNT EMS
Payment	T/T Paypal Visa MoneyGram Western Union
DataSheet	IPD65R420CFDBTMA1 PDF

Availability

InStock	1,290
UnitPrice	$ 0.76000

IPD65R420CFDBTMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

IPD65R420CFDBTMA1 Specifications

Type	Description
Series:	CoolMOS™
Package:	Bulk
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	420mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs:	32 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	870 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	83.3W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO252-3
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.