TW070J120B,S1Q

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Manifakti Pati	TW070J120B,S1Q
Manifakti	Toshiba Electronic Devices and Storage Corporation
Deskripsyon	SICFET N-CH 1200V 36A TO3P
Kategori	pwodwi semi-kondiktè disrè
Fanmi	tranzistò - fets, mosfets - sèl
Sik lavi:	New from this manufacturer.
Livrezon:	DHL FedEx Ups TNT EMS
Peman	T/T Paypal Visa MoneyGram Western Union

Disponibilite

Nan stok	273
Pri Inite	$ 33.97000

TW070J120B,S1Q Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

TW070J120B,S1Q Espesifikasyon

Kalite	Deskripsyon
seri:	*
pake:	Tube
estati pati:	Active
fet tip:	N-Channel
teknoloji:	SiCFET (Silicon Carbide)
drenaj nan sous vòltaj (vdss):	1200 V
aktyèl - drenaj kontinyèl (id) @ 25 ° c:	36A (Tc)
vòltaj kondwi (max rds sou, min rds sou):	20V
rds sou (max) @ id, vgs:	90mOhm @ 18A, 20V
vgs(th) (max) @ id:	5.8V @ 20mA
chaj pòtay (qg) (max) @ vgs:	67 nC @ 20 V
vgs (max):	±25V, -10V
kapasite antre (ciss) (max) @ vds:	1680 pF @ 800 V
fet karakteristik:	Standard
dissipation pouvwa (max):	272W (Tc)
opere tanperati:	-55°C ~ 175°C
kalite aliye:	Through Hole
pake aparèy founisè:	TO-3P(N)
pake / ka:	TO-3P-3, SC-65-3

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.