IRFHE4250DTRPBF

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Manifakti Pati	IRFHE4250DTRPBF
Manifakti	Rochester Electronics
Deskripsyon	HEXFET POWER MOSFET
Kategori	pwodwi semi-kondiktè disrè
Fanmi	tranzistò - fets, mosfets - etalaj
Sik lavi:	New from this manufacturer.
Livrezon:	DHL FedEx Ups TNT EMS
Peman	T/T Paypal Visa MoneyGram Western Union
Fèy done	IRFHE4250DTRPBF PDF

Disponibilite

Nan stok	9000
Pri Inite	$ 1.79000

IRFHE4250DTRPBF Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

IRFHE4250DTRPBF Espesifikasyon

Kalite	Deskripsyon
seri:	HEXFET®
pake:	Bulk
estati pati:	Active
fet tip:	2 N-Channel (Dual)
fet karakteristik:	Standard
drenaj nan sous vòltaj (vdss):	25V
aktyèl - drenaj kontinyèl (id) @ 25 ° c:	86A (Tc), 303A (Tc)
rds sou (max) @ id, vgs:	2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V
vgs(th) (max) @ id:	2.1V @ 35µA, 2.1V @ 100µA
chaj pòtay (qg) (max) @ vgs:	20nC, 53nC @ 4.5V
kapasite antre (ciss) (max) @ vds:	1735pF @ 13V, 4765pF @ 13V
pouvwa - max:	156W (Tc)
opere tanperati:	-55°C ~ 150°C (TJ)
kalite aliye:	Surface Mount
pake / ka:	32-PowerVFQFN
pake aparèy founisè:	32-PQFN (6x6)

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.