FF8MR12W2M1B11BOMA1

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Manifakti Pati	FF8MR12W2M1B11BOMA1
Manifakti	IR (Infineon Technologies)
Deskripsyon	MOSFET 2N-CH 1200V AG-EASY2BM-2
Kategori	pwodwi semi-kondiktè disrè
Fanmi	tranzistò - fets, mosfets - etalaj
Sik lavi:	New from this manufacturer.
Livrezon:	DHL FedEx Ups TNT EMS
Peman	T/T Paypal Visa MoneyGram Western Union
Fèy done	FF8MR12W2M1B11BOMA1 PDF

Disponibilite

Nan stok	45
Pri Inite	$ 248.29000

FF8MR12W2M1B11BOMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

FF8MR12W2M1B11BOMA1 Espesifikasyon

Kalite	Deskripsyon
seri:	CoolSiC™+
pake:	Tray
estati pati:	Active
fet tip:	2 N-Channel (Dual)
fet karakteristik:	Silicon Carbide (SiC)
drenaj nan sous vòltaj (vdss):	1200V
aktyèl - drenaj kontinyèl (id) @ 25 ° c:	150A (Tj)
rds sou (max) @ id, vgs:	7.5mOhm @ 150A, 15V (Typ)
vgs(th) (max) @ id:	5.55V @ 60mA
chaj pòtay (qg) (max) @ vgs:	372nC @ 15V
kapasite antre (ciss) (max) @ vds:	11000pF @ 800V
pouvwa - max:	20mW (Tc)
opere tanperati:	-40°C ~ 150°C (TJ)
kalite aliye:	Chassis Mount
pake / ka:	Module
pake aparèy founisè:	AG-EASY2BM-2

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.